The role of different types of dopants in 1.3 μm InAs/GaAs quantum-dot lasers
Huiwen Deng, Lydia Jarvis, Zhibo Li, Zizhuo Liu, Mingchu Tang, Keshuang Li, Junjie Yang, Benjamin Maglio, Samuel Shutts, Jiawang Yu, Lingfang Wang, Siming Chen, Chao‐Yuan Jin, A.J. Seeds, Huiyun Liu, Peter M. Smowton
Abstract
Abstract The performance of O-band InAs/GaAs quantum-dot (QD) lasers grown by molecular beam epitaxy with three different doping strategies in the active region are investigated for a temperature range of 17 °C–97 °C. The lasing performance indicates that the n-type doping technique reduced the threshold current density of InAs QD lasers across the full temperature range and narrowed the near field lasing spot. However, for short-cavity lasers, the n-type doped laser switches from ground-state to excited-state lasing at a lower temperature compared to undoped and p-type modulation-doped lasers. In contrast, the p-type modulation-doped lasers have a reduced threshold current density for higher temperatures and for shorter lasers with cavity lengths of 1 mm and below.