Analysis of Dead-Time Energy Loss in GaN-Based TCM Converters With an Improved GaN HEMT Model
Yi Zhang, Wenzhe Xu, Yue Xie, Teng Liu, Zongheng Wu, Cai Chen, Yong Kang, Han Peng
Abstract
For gallium nitride (GaN) based triangular current mode (TCM) applications, the dead-time has a significant effect on the switching loss. However, previous GaN high electron mobility transistor (HEMT) models focus on the turn- <sc xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">on/off</small> process without fully considering the effect of the dead-time. Hence, this article analyzes the switching transients under the superfluous and insufficient dead-time and evaluates the dead-time loss with an improved GaN HEMT model. The proposed model improves an existing GaN HEMT model by adding the voltage rising/falling time of the gate driver, the dynamic threshold voltage of Schottky-type GaN HEMTs, and an equivalent gate-drain capacitance obtained from the datasheet. Verified by a GaN-based double-pulse test, the proposed model can more accurately calculate the gate-source voltage and the self-commutated reverse conduction voltage. Verified by a GaN-based TCM Buck converter, the proposed model can predict the dead-time loss well and has higher simulation accuracy for the turn- <sc xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">on</small> process induced by the inappropriate dead-time.