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The role of AlN thickness in MOCVD growth of N-polar GaN

Yangfeng Li, Xiaotao Hu, Yimeng Song, Zhaole Su, Wenqi Wang, Haiqiang Jia, Wenxin Wang, Yang Jiang, Hong Chen

2021Journal of Alloys and Compounds23 citationsDOI

Topics & Concepts

Metalorganic vapour phase epitaxyMaterials scienceSapphireGallium nitrideDislocationNitrideTransmission electron microscopyChemical vapor depositionWide-bandgap semiconductorVicinalOptoelectronicsPolarEpitaxyCrystallographyLayer (electronics)Composite materialNanotechnologyOpticsChemistryLaserAstronomyPhysicsOrganic chemistryGaN-based semiconductor devices and materialsMetal and Thin Film MechanicsZnO doping and properties
The role of AlN thickness in MOCVD growth of N-polar GaN | Litcius