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Thickness-Dependent Structural and Electrical Properties of WS<sub>2</sub> Nanosheets Obtained via the ALD-Grown WO<sub>3</sub> Sulfurization Technique as a Channel Material for Field-Effect Transistors

Р. И. Романов, Maxim G. Kozodaev, Аnna G. Chernikova, Ivan V. Zabrosaev, Anastasia Chouprik, Sergei Zarubin, Sergey M. Novikov, Valentyn S. Volkov, Andrey M. Markeev

2021ACS Omega33 citationsDOIOpen Access PDF

Abstract

film (3-4 monolayers) is most challenging due to the amorphous intergrain phase formation, and further investigations focused on preventing the intergrain phase formation should be conducted.

Topics & Concepts

Materials scienceAmorphous solidPhase (matter)Atomic layer depositionTransmission electron microscopyMonolayerOptoelectronicsElectrical resistivity and conductivityChemical engineeringGrain sizeLayer (electronics)NanotechnologyAnalytical Chemistry (journal)Composite materialCrystallographyChemistryElectrical engineeringEngineeringChromatographyOrganic chemistry2D Materials and ApplicationsMXene and MAX Phase MaterialsPerovskite Materials and Applications
Thickness-Dependent Structural and Electrical Properties of WS<sub>2</sub> Nanosheets Obtained via the ALD-Grown WO<sub>3</sub> Sulfurization Technique as a Channel Material for Field-Effect Transistors | Litcius