Integration of epitaxial monolayer MX₂ channels on 300mm wafers via Collective-Die-To-Wafer (CoD2W) transfer
Souvik Ghosh, Quentin Smets, Sreetama Banerjee, T. Schram, Koen Kennes, Rudy Verheyen, Pawan Kumar, Marie‐Emmanuelle Boulon, Benjamin Groven, H. M. Silva, Shreya Kundu, Daire Cott, Dennis Lin, Paola Favia, Thomas Nuytten, Alain Phommahaxay, Inge Asselberghs, Carmen de la Rosa, Gouri Sankar Kar, Steven Brems
Abstract
Inspired by techniques designed for 3D integration, a die-to-wafer (D2W) transfer method can enable MX <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf> -channel devices in a semiconductor fab for either high-performance CFET or hybrid-integrated CMOS. A Collective D2W(CoD2W) technique was successfully developed to transfer epitaxial single-layer MX <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf> from sapphire to 300mm device wafers which facilitates uniform and residue-free “dies”. We report a FEOL semiconductor compatible integration flow used to build back-gated transistors with high device yield and mobility values up to 50 cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> /Vs on SiO <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf> back gate dielectrics.