Loss Modeling and Testing of 800-V DC Bus IGBT and SiC Traction Inverter Modules
Alexander Allca-Pekarovic, Phillip J. Kollmeyer, John Reimers, Parisa Mahvelatishamsabadi, Tissaphern Mirfakhrai, Payam Naghshtabrizi, Ali Emadi
Abstract
This paper investigates efficiency gains achieved using an 800 V DC bus and wideband gap silicon carbide (SiC) semiconductors for a light-duty electric vehicle (EV), rather than an insulated-gate bipolar transistor (IGBT) inverter with a 400 V bus as is commonly used for EVs. Analytical inverter loss models with 600 V and 1200 V IGBTs, and 1200 V hybrid SiC and 1200 V All-SiC semiconductors are incorporated into a Chevrolet Bolt EV model and simulated over standard drive cycles. Battery pack voltage variations throughout the drive cycles, as well as variations in junction temperature, resulted in 16 to 27 % increased loss compared to fixed voltage and temperature assumptions. To validate the models, experimental testing was performed on a 1200 V IGBT inverter and a 1200 V SiC inverter both powering 160+ kW rated traction machines. Experimentally measured loss was typically within 100 W of the model, demonstrating its accuracy. Going from a 400 V to an 800 V DC bus with IGBTs, EV range was modeled to increase 1.2 %, while an 800 V bus and all SiC inverter results in a range increase of 5.0%. An empirical loss model fitted to measured inverter data shows the analytical model estimates range within 6 km.