A Metal-Insulator-Semiconductor Non-Volatile Programmable Capacitor Based on a HfAlO<i>ₓ</i> Ferroelectric Film
Zuopu Zhou, Jiuren Zhou, Xinke Wang, Haibo Wang, Chen Sun, Kaizhen Han, Yuye Kang, Zijie Zheng, Haotian Ni, Xiao Gong
Abstract
In this letter, we proposed and experimentally demonstrated a metal-insulator-semiconductor (MIS) ferroelectric capacitor with non-volatile programmable capacitance. By switching the polarization of the Al-doped HfO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> ferroelectric insulator with the external electric field, the depletion width of the semiconductor can be modulated, leading to the continuously adjustable capacitance of the device. Due to the non-volatility of ferroelectricity, the programmed capacitance is stable without the constant DC bias. We also proposed some potential applications of the capacitor in the data storage and circuit design.