Pressure Sensor with Novel Electrical Circuit Utilizing Bipolar Junction Transistor
Mikhail Basov
Abstract
High sensitivity MEMS pressure sensor chip for different ranges (1 to 60 kPa) utilizing the novel electrical circuit of piezosensitive differential amplifier with negative feedback loop (PDA-NFL) is developed. Pressure sensor chip PDA-NFL utilizes two bipolar-junction transistors (BJT) with vertical n-p-n type structure (V-NPN) and eight piezoresistors (p-type). Both theoretical model of sensor response to pressure and temperature and experimental data are presented. Data confirms the applicability of theoretical model. Introduction of the amplifier allows for decreasing chip size while keeping the same sensitivity as a chip with classic Wheatstone bridge circuit.
Topics & Concepts
Wheatstone bridgeBipolar junction transistorAmplifierPressure sensorChipSensitivity (control systems)Materials scienceTransistorMicroelectromechanical systemsElectrical engineeringOptoelectronicsDifferential amplifierJunction temperatureElectronic engineeringEngineeringCMOSResistorPhysicsVoltagePower (physics)Mechanical engineeringQuantum mechanicsAdvanced MEMS and NEMS TechnologiesMechanical and Optical ResonatorsSensor Technology and Measurement Systems