The impact of deposition and annealing temperature on the growth properties and surface passivation of silicon dioxide films obtained by atomic layer deposition
Jiahui Xu, Shizheng Li, Wenjing Zhang, Shang Yan, Cui Liu, Xiao Yuan, Xiaojun Ye, Hongbo Li
Topics & Concepts
PassivationX-ray photoelectron spectroscopyAtomic layer depositionAnnealing (glass)SiliconMaterials scienceSilaneChemical engineeringChemical vapor depositionAnalytical Chemistry (journal)Thin filmInorganic chemistryChemistryNanotechnologyLayer (electronics)MetallurgyComposite materialOrganic chemistryEngineeringSilicon and Solar Cell TechnologiesSemiconductor materials and devicesThin-Film Transistor Technologies