Litcius/Paper detail

Methods for noise margin analysis of conventional 6 T and 8 T SRAM cell

Aastha Gupta, Ravi Sindal, Priyanka Sharma, Ashish Panchal, Vaibhav Neema

2023Materials Today Proceedings15 citationsDOI

Topics & Concepts

Static random-access memoryTransistorNoise (video)Noise marginComputer scienceMargin (machine learning)Memory cellElectronic engineeringTransistor countDissipationCadenceVoltageElectrical engineeringEngineeringComputer hardwarePhysicsArtificial intelligenceImage (mathematics)ThermodynamicsMachine learningLow-power high-performance VLSI designVLSI and Analog Circuit TestingAdvancements in Semiconductor Devices and Circuit Design