Improving the Strain Control Performance of MoS<sub>2</sub> Monolayer to Develop Flexible Electronics
Weiquan Chen, Yuhui Qiu, Ivan S. Babichuk, Ivan S. Babichuk, Chang Yu, Ruiliang Zhou, Zi-Feng He, Yijie Liu, Jianan Zhang, Iryna V. Babichuk, Iryna V. Babichuk, Anton Tiutiunnyk, D. Laroze, В. В. Брус, Jian Yang
Abstract
In recent years, two‐dimensional (2D) materials with unique mechanical, optical, and electrical properties have attracted extensive attention. In terms of mechanical properties, 2D molybdenum disulfide (MoS 2 ) can perform larger strains than traditional semiconductor materials. In this contribution, the chemical vapor deposition technique to grow MoS 2 films on a Si wafer and transfer them onto a flexible substrate is used. The controlled deformation of 2D MoS 2 samples is realized by encapsulating them with a flexible acrylate film via successive spin‐coating and photopolymerization. Improved strain control is achieved due to the perfect integration of different components (MoS 2 /substrate) and the high adhesion of polymers. This approach provides a better detection of the changing structure of the MoS 2 monolayer on the flexible substrate during tensile. It is noted that the crystal symmetry damage caused by strain is reflected in the redshift of the characteristic bands of MoS 2 . Hence, an effective way for strain regulation of MoS 2 for future applications in flexible devices is provided.