Spin-Orbit-Torque Material Exploration for Maximum Array-Level Read/Write Performance
Yu-Ching Liao, Piyush Kumar, Mahendra DC, Xiang Li, Delin Zhang, Jian‐Ping Wang, Shan X. Wang, Daniel C. Ralph, Azad Naeemi
Abstract
A diverse set of SOT materials with vastly different values of spin efficiency, conductivity, and thickness are being explored to achieve the lowest write energy. Research on SOT-assisted STT-MRAM and novel materials for the switching of magnets with perpendicular magnetic anisotropy (PMA) is also ongoing. This paper presents a comprehensive study on the impact of material parameters on array-level read and write operations for both in-plane and PMA MRAM cells. The results offer important guidelines for material development for this technology.
Topics & Concepts
TorqueMagnetoresistive random-access memoryAnisotropyMagnetSpin (aerodynamics)Materials sciencePerpendicularConductivityComputer scienceSet (abstract data type)OptoelectronicsEfficient energy useOrbit (dynamics)Engineering physicsMechanical engineeringElectrical engineeringPhysicsRandom access memoryEngineeringAerospace engineeringOpticsComputer hardwareMathematicsProgramming languageGeometryThermodynamicsQuantum mechanicsMagnetic properties of thin filmsAdvanced Data Storage TechnologiesZnO doping and properties