Voltage-Controlled Anisotropy and Current-Induced Magnetization Dynamics in Antiferromagnetic-Piezoelectric Layered Heterostructures
Pavel Popov, A. R. Safin, A. Kirilyuk, С. А. Никитов, Ivan Lisenkov, V. Tyberkevich, A. N. Slavin
Abstract
It is shown theoretically that in a layered heterostructure comprising piezoelectric, dielectric antiferromagnetic crystal, and heavy metal (PZ/AFM/HM), it is possible to control the anisotropy of the AFM layer by applying a dc voltage across the PZ layer. In particular, we show that by varying the dc voltage across the heterostructure and/or the dc current in the HM, it is possible to vary the frequency of the antiferromagnetic resonance of the AFM in a passive (subcritical) regime and, also, to reduce the threshold of the current-induced terahertz-frequency generation. Our analysis also shows that, unfortunately, the voltage-induced reduction of the generation threshold leads to the proportional reduction of the amplitude of the terahertz-frequency signal generated in the active (supercritical) regime. The general results are illustrated by a calculation of the characteristics of experimentally realizable PZT-5H/$\mathrm{Ni}\mathrm{O}$/$\mathrm{Pt}$.