Room Temperature 2DEG Mobility Above 2350 cm2/V·s in AlGaN/GaN HEMT Grown on GaN Substrate
Jiayan Chu, Quan Wang, Lijuan Jiang, Chun Feng, Wei Li, Hongxin Liu, Hongling Xiao, Xiaoliang Wang
Topics & Concepts
High-electron-mobility transistorMetalorganic vapour phase epitaxySubstrate (aquarium)Materials scienceDislocationChemical vapor depositionOptoelectronicsElectron mobilityFermi gasSurface roughnessLayer (electronics)TransistorEpitaxyElectronNanotechnologyComposite materialElectrical engineeringPhysicsVoltageGeologyQuantum mechanicsOceanographyEngineeringGaN-based semiconductor devices and materialsGa2O3 and related materialsZnO doping and properties