Investigation of Quantum Confinement Effects on Molybdenum Disulfide (MoS2) Based Transistor Using Ritz Galerkin Finite Element Technique
R. Sridevi, J. Charles Pravin, A. Ramesh Babu, D. Nirmal
Topics & Concepts
Molybdenum disulfideFinite element methodMaterials scienceSchrödinger equationGalerkin methodQuantum dotWave functionPoisson's equationBohr radiusQuantum mechanicsPhysicsComposite materialThermodynamicsAdvancements in Semiconductor Devices and Circuit DesignNanowire Synthesis and Applications2D Materials and Applications