Two-dimensional hole gas formation at the κ-Ga2O3 /AlN heterojunction interface
A. Y. Polyakov, В. И. Николаев, А. И. Печников, E. B. Yakimov, S. Yu. Karpov, С. И. Степанов, Ivan Shchemerov, A.A. Vasil'ev, А. В. Черных, Andrej Kuznetsov, In‐Hwan Lee, S. J. Pearton
Topics & Concepts
Ohmic contactMaterials scienceHeterojunctionElectron beam-induced currentOptoelectronicsDiodeEpitaxyMolecular beam epitaxySchottky diodeDopingConductivityWide-bandgap semiconductorSchottky barrierNitrideLayer (electronics)NanotechnologyChemistrySiliconPhysical chemistryGa2O3 and related materialsAdvanced Photocatalysis TechniquesZnO doping and properties