High operating temperature (> 200 °C) InAs/GaAs quantum-dot laser with co-doping technique
Jae‐Seong Park, Huiwen Deng, Shujie Pan, Hexing Wang, Yangqian Wang, Jiajing Yuan, Xuanchang Zhang, Haotian Zeng, Hui Jia, Manyu Dang, Pawan Mishra, George Mathew Jandu, Siming Chen, Peter M. Smowton, A.J. Seeds, Huiyun Liu, Mingchu Tang
Abstract
Abstract Working reliably at elevated operating temperatures is a key requirement for semiconductor lasers used in optical communication. InAs/GaAs quantum-dot (QD) lasers have been considered a promising solution due to the discrete energy states of QDs. This work demonstrates temperature-insensitive and low threshold InAs/GaAs QD lasers incorporating co-doping technique, compared with p-type modulation doping. 2 mm long co-doped QD lasers exhibit a low threshold current density of 154 A cm −2 (210 A cm −2 ) and operate at a high heatsink temperature of 205 °C (160 °C) under the pulsed (continuous-wave) mode, outperforming the p-type doped QD lasers. The results reveal that co-doping effectively enhances both high-temperature stability and threshold reduction in InAs/GaAs QD lasers, surpassing the performance of conventional p-type modulation doping. This approach offers a pathway toward cooling-free operation, making co-doped QD lasers suitable for data and telecommunication applications.