Switching Characteristic Analysis and Application Assessment of SiC MOSFET With Common Source Inductance and Kelvin Source Connection
Yang Li, Yan Zhang, Yuan Gao, Sixing Du, Jinjun Liu
Abstract
SiC <sc xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">mosfet</small> s with packages of common source inductance (TO-247-3) and kelvin source connection (TO-247-4) are both widely used devices in the existing power conversion. Transient analysis of switching characteristics reveals some evaluation mistakes and misguidance design by using the conventional test circuit due to the difference packages. However, the more precise gate characteristic of TO-247-3 SiC <sc xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">mosfet</small> can be obtained by using TO-247-4 device package. Based on the unique feature, this article provides an improved evaluation method to get a comprehensive comparison of TO-247-3 and TO-247-4 SiC <sc xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">mosfet</small> commutation as the active and passive switch devices in the typical half-bridge circuit. The results indicate that 4-PIN SiC <sc xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">mosfet</small> has both advantages of low switching loss and reduced d <italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">v</i> /d <italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">t.</i> Furthermore, this article first reveals that the widely used drive design for TO-247-3 <sc xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">mosfet</small> with active miller clamped drive IC has a potential irrational circuit defect. Mathematical model analysis and experiment test have been accomplished to verify the superiority of the improved evaluation method. TO-247-4 SiC <sc xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">mosfet</small> is more promising in application of high efficiency, high frequency as well as strict EMI requirement.