Investigation of the damage behavior in SiC without any additives irradiated with Si ions by GIXRD, Raman and TEM
Jianlong Chai, Lijuan Niu, Yabin Zhu, Peng Jin, Tielong Shen, Yuhan Zhai, Yucheng Feng, Liangting Sun, Zhiguang Wang
Topics & Concepts
Materials scienceRaman spectroscopyIrradiationIonSilicon carbideRadiochemistryAnalytical Chemistry (journal)Composite materialOpticsNuclear physicsEnvironmental chemistryPhysicsChemistryQuantum mechanicsIntegrated Circuits and Semiconductor Failure AnalysisSemiconductor materials and devicesIon-surface interactions and analysis