Analysis of axial resistivity during SiC crystal growth by the PVT method
Lingling Xuan, Xinyu Xie, Binjie Xu, Sheng'ou Lu, Anqi Wang, Lingmao Xu, Xiaodong Pi, Deren Yang, Xuefeng Han
Abstract
The influence of growth front temperature (left) and C/Si ratio (right) on the axial resistivity distribution during SiC crystal growth by the PVT method.
Topics & Concepts
Electrical resistivity and conductivityMaterials scienceCrystal (programming language)Crystal growthCrystallographyChemistryElectrical engineeringComputer scienceEngineeringProgramming languageSilicon Carbide Semiconductor TechnologiesSilicon and Solar Cell TechnologiesAdvanced Surface Polishing Techniques