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A 28nm 64-kb 31.6-TFLOPS/W Digital-Domain Floating-Point-Computing-Unit and Double-Bit 6T-SRAM Computing-in-Memory Macro for Floating-Point CNNs

An Guo, Xin Si, Xi Chen, Fangyuan Dong, Xingyu Pu, Dongqi Li, Yongliang Zhou, Lizheng Ren, Yeyang Xue, Xueshan Dong, Hui Gao, Yiran Zhang, Jingmin Zhang, Yuyao Kong, Tianzhu Xiong, Bo Wang, Hao Cai, Weiwei Shan, Jun Yang

2023109 citationsDOI

Abstract

SRAM-based computing-in-memory (SRAM-CIM) has been intensively studied and developed to improve the energy and area efficiency of AI devices. SRAM-CIMs have effectively implemented high integer (INT) precision multiply-and-accumulate (MAC) operations to improve the inference accuracy of various image classification tasks [1]–[3],[5],[6]. To realize more complex AI tasks, such as detection and segmentation, and to support on-chip training for better inference accuracy, floating-point MAC (FP-MAC) operations with high-energy efficiency are required. However, most SRAM-CIMs that previously used digital [5], [6] or analog [1]–[4] in-memory computing cannot effectively support FP-MACs: e.g., Brain Float16 (BF16) datatype. Since supporting high floating-point input (IN), weight (W) and output (OUT) precision for SRAM-CIM may cause (1) inconsistency between the shift-alignment of conventional digital FP-MACs and the structured mapping of most SRAM-CIMs, and (2) results in a more difficult tradeoff between throughput/memory size (T/S), energy efficiency (EF), and memory density (MD), as shown in Fig. 7.2.1.

Topics & Concepts

Static random-access memoryComputer scienceComputer hardwareFloating pointDouble-precision floating-point formatParallel computingMacroEmbedded systemEnergy (signal processing)Point (geometry)ThroughputAlgorithmOperating systemMathematicsGeometryStatisticsWirelessProgramming languageAdvanced Memory and Neural ComputingFerroelectric and Negative Capacitance DevicesSemiconductor materials and devices