Improved carrier mobility of Sn-doped Ge thin films (≤20 nm) on insulator by interface-modulated solid-phase crystallization combined with surface passivation
Takaya Nagano, Ryutaro Hara, Kenta Moto, Keisuke Yamamoto, Taizoh Sadoh
Topics & Concepts
Materials sciencePassivationCrystallizationNucleationElectron mobilityDopingOptoelectronicsThin filmSemiconductorThin-film transistorFabricationPhase (matter)Grain boundaryNanotechnologyLayer (electronics)Chemical engineeringMicrostructureComposite materialEngineeringChemistryPathologyAlternative medicineMedicineOrganic chemistryThin-Film Transistor TechnologiesPhotonic and Optical DevicesNanowire Synthesis and Applications