Giant magnetoresistance response in Sr<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline" id="d1e119" altimg="si28.svg"><mml:msub><mml:mrow/><mml:mrow><mml:mn>2</mml:mn></mml:mrow></mml:msub></mml:math>FeMoO<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline" id="d1e127" altimg="si29.svg"><mml:msub><mml:mrow/><mml:mrow><mml:mn>6</mml:mn></mml:mrow></mml:msub></mml:math> based organic spin valves
Ilari Angervo, M. Saloaro, Heikki Palonen, H. Huhtinen, P. Paturi, Tapio Mäkelä, Sayani Majumdar
Abstract
We report the fabrication of the first Sr2FeMoO6 based organic spin valve device using Tris(8- hydroxyquinolinato) aluminum (Alq3) as a spin transport layer. The characterization of the device confirms hysteretic magnetoresistance with approximately 20%–30% switching between high and low resistance states at low temperatures. The results demonstrate that organic semiconductors can form a suitable interface with double perovskite, half metallic Sr2FeMoO6, for efficient low temperature operation and have a potential to improve the room temperature performance significantly in tunneling devices where decay in spin diffusion length of organic layer does not affect the transport.