Optical absorption of interlayer excitons in transition-metal dichalcogenide heterostructures
Elyse Barré, Ouri Karni, Erfu Liu, Aidan L. O’Beirne, Xueqi Chen, Henrique B. Ribeiro, Leo Yu, Bumho Kim, Kenji Watanabe, Takashi Taniguchi, Katayun Barmak, Chun Hung Lui, Sivan Refaely‐Abramson, Felipe H. da Jornada, Tony F. Heinz
Abstract
Interlayer excitons, electron-hole pairs bound across two monolayer van der Waals semiconductors, offer promising electrical tunability and localizability. Because such excitons display weak electron-hole overlap, most studies have examined only the lowest-energy excitons through photoluminescence. We directly measured the dielectric response of interlayer excitons, which we accessed using their static electric dipole moment. We thereby determined an intrinsic radiative lifetime of 0.40 nanoseconds for the lowest direct-gap interlayer exciton in a tungsten diselenide/molybdenum diselenide heterostructure. We found that differences in electric field and twist angle induced trends in exciton transition strengths and energies, which could be related to wave function overlap, moiré confinement, and atomic reconstruction. Through comparison with photoluminescence spectra, this study identifies a momentum-indirect emission mechanism. Characterization of the absorption is key for applications relying on light-matter interactions.