A quantum resistance memristor for an intrinsically traceable International System of Units standard
Gianluca Milano, Xin Zheng, Fabio Michieletti, Giuseppe Leonetti, Gabriel Caballero, İlker Öztoprak, Luca Boarino, Özgür Bozat, Luca Callegaro, Natascia De Leo, Isabel Godinho, Daniel Granados, Itır Köymen, Mariela Menghini, E. Miranda, Luís Ribeiro, Carlo Ricciardi, J. Suñé, Vítor Cabral, Ilia Valov
Abstract
Abstract The recent revision of the International System of Units (SI)—which fixed the numerical values of nature’s fundamental constants—has opened new perspectives for practical realizations of SI units. Here we demonstrate an intrinsic resistance standard based on memristive nanoionic cells that operate in air at room temperature and are directly accessible to end users. By driving these devices into the quantum conductance regime and using an electrochemical-polishing-based programming strategy, we achieved quantum conductance levels that can be exploited as intrinsic standard values. An interlaboratory comparison confirmed metrological consistency, with deviations of –3.8% and 0.6% from the agreed SI values for the fundamental quantum of conductance, G 0 , and 2 G 0 , respectively. These results lay the groundwork for the implementation of national metrology institute services on chip and for the development of self-calibrating measurement systems with zero-chain traceability.