Time-dependent dielectric breakdown of gate oxide on 4H-SiC with different oxidation processes
Bing‐Yue Tsui, Yi-Ting Huang, Tian‐Li Wu, Chao-Hsin Chien
Topics & Concepts
Time-dependent gate oxide breakdownAnnealing (glass)Dielectric strengthGate oxideQuantum tunnellingOxideMaterials scienceDielectricBreakdown voltageNitrogenGate dielectricElectric fieldOptoelectronicsAnalytical Chemistry (journal)ChemistryElectrical engineeringVoltageComposite materialMetallurgyPhysicsChromatographyEngineeringOrganic chemistryTransistorQuantum mechanicsSilicon Carbide Semiconductor TechnologiesSemiconductor materials and devicesCopper Interconnects and Reliability