A Thin-Film Piezoelectric-on-Silicon MEMS Oscillator for Mass Sensing Applications
Chien-Hao Weng, Gayathri Pillai, Sheng‐Shian Li
Abstract
In this study, a Thin-film Piezoelectric-on-Silicon (TPoS) MEMS oscillator is successfully demonstrated that uses lead zirconate titanate (PZT) thin-film piezoelectric layer deposited on a single-crystal silicon substrate to realize a length-extensional mode resonator, having a resonant frequency of 5.12 MHz and a quality factor (Q) of 311. For closed-loop implementation, a commercial Lock-in amplifier with a Phase Locked Loop (PLL) facility was used to fulfill the Barkhausen criteria for oscillation. The mass resolution and sensitivity of the proposed mass sensor are 0.54 pg and 4.96 Hz/pg, respectively. Finally, a board-level sustaining circuit, which includes a transimpedance amplifier (TIA) and an attenuator is integrated with the TPoS MEMS resonator for oscillation to achieve a portable sensor. Phase noise of -104.11 dBc/Hz at 1 kHz offset was recorded under ambient pressure and room temperature for a carrier frequency of 5.12 MHz. The mass resolution for the board-level mass sensor implemented in this work is 0.15 pg.