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First-principles analysis of physical properties anisotropy for the Ag2SiS3 chalcogenide semiconductor

M. Ya. Rudysh, P. А. Shchepanskyi, A.O. Fedorchuk, M.G. Brik, Chong‐Geng Ma, G.L. Myronchuk, M. Piasecki

2020Journal of Alloys and Compounds26 citationsDOI

Topics & Concepts

PseudopotentialAnisotropyCondensed matter physicsCrystal (programming language)ChalcogenideDispersion (optics)Refractive indexBand gapDensity functional theoryDielectricMaterials scienceLocal-density approximationSemiconductorOpticsChemistryElectronic structurePhysicsComputational chemistryOptoelectronicsComputer scienceProgramming languageChalcogenide Semiconductor Thin FilmsCrystal Structures and PropertiesPhase-change materials and chalcogenides
First-principles analysis of physical properties anisotropy for the Ag2SiS3 chalcogenide semiconductor | Litcius