Asymmetric Metal/α-In<sub>2</sub>Se<sub>3</sub>/Si Crossbar Ferroelectric Semiconductor Junction
Mengwei Si, Zhuocheng Zhang, Sou-Chi Chang, Nazila Haratipour, Dongqi Zheng, Junkang Li, Uygar E. Avci, Peide D. Ye
Abstract
A ferroelectric semiconductor junction is a promising two-terminal ferroelectric device for nonvolatile memory and neuromorphic computing applications. In this work, we propose and report the experimental demonstration of asymmetric metal/α-In2Se3/Si crossbar ferroelectric semiconductor junctions (c-FSJs). The depletion in doped Si is used to enhance the modulation of the effective Schottky barrier height through the ferroelectric polarization. A high-performance α-In2Se3 c-FSJ is achieved with a high on/off ratio > 104 at room temperature, on/off ratio > 103 at an elevated temperature of 140 °C, retention > 104 s, and endurance > 106 cycles. The on/off ratio of the α-In2Se3 asymmetric FSJs can be further enhanced to >108 by introducing a metal/α-In2Se3/insulator/metal structure.