Long-term stability in perovskite solar cells through atomic layer deposition of tin oxide
Danpeng Gao, Bo Li, Qi Liu, Chunlei Zhang, Zexin Yu, Shuai Li, Jianqiu Gong, Liangchen Qian, Francesco Vanin, Kelly Schutt, Melissa Davis, Axel F. Palmstrom, Steven P. Harvey, Nicholas J. Long, Joseph M. Luther, Xiao Cheng Zeng, Zonglong Zhu
Abstract
Robust contact schemes that boost stability and simplify the production process are needed for perovskite solar cells (PSCs). We codeposited perovskite and hole-selective contact while protecting the perovskite to enable deposition of SnO x /Ag without the use of a fullerene. The SnO x , prepared through atomic layer deposition, serves as a durable inorganic electron transport layer. Tailoring the oxygen vacancy defects in the SnO x layer led to power conversion efficiencies (PCEs) of >25%. Our devices exhibit superior stability over conventional p-i-n PSCs, successfully meeting several benchmark stability tests. They retained >95% PCE after 2000 hours of continuous operation at their maximum power point under simulated AM1.5 illumination at 65°C. Additionally, they boast a certified T 97 lifetime exceeding 1000 hours.