Improving the Stability and Optoelectronic Properties of All Inorganic Less‐Pb Perovskites by B‐Site Doping for High‐Performance Inorganic Perovskite Solar Cells
Guiqiang Wang, Lei Miao, Jieqiong Liu, Qingquan He, Wei Zhang
Abstract
CsPbX 3 (X = I, Br) inorganic perovskite solar cells (PSCs) have been considered as one of the most appealing research topics in the fields of photovoltaic technologies in the past several years due to their excellent thermal stability and booming conversion efficiency. Nevertheless, there are still a large number of critical challenges and issues for inorganic PSCs, such as unstable phase structure of I‐rich inorganic perovskites at ambient condition, the wide bandgap of Br‐rich inorganic perovskites, and serious defect traps, hindering further development of inorganic PSCs. Recently, partially substituting Pb 2+ with other metal ions has been shown to enhance the stability, tune the bandgap, reduce the defects of CsPbX 3 inorganic perovskites, and thereby improve the photovoltaic performance of inorganic PSCs. Herein, the recent progress in improving the photovoltaic performance of inorganic PSCs through the B‐site doping strategy is summarized, and the influence of the alternative metal ions on the stability and optoelectronic properties of inorganic perovskites and photovoltaic characteristics of CsPbX 3 ‐based PSCs is discussed. Finally, the issues that need to be understood in more detail are presented. It is believed that B‐site doping offers a practical strategy to gain high‐performance perovskite photovoltaic devices.