<i>In situ</i> growth of Cu-doped MoS <sub>2</sub> thin films <i>via</i> a laser-induced technique: efficient P-type doping and effective enhancement of the FET device performance
Shijiao Hu, Yishuo Hu, Zhuocheng Gan, Yufei Yang, Qiu Leqi, Peng Yu, Huaicheng Deng, Zhiqi Wen, Zhang Wenhao, Bo Wei, Yuantai Hu, Yang Wanli, Xiangbin Zeng
Abstract
A novel in situ doping technique was proposed, wherein copper (Cu) was successfully doped into MoS 2 thin films as a p-type doping acceptor using pulsed laser-induced technology. The growth and doping processes were simultaneously completed.
Topics & Concepts
Materials scienceDopingOptoelectronicsIn situThin filmLaserPerformance enhancementNanotechnologyOpticsMeteorologyMedicinePhysicsPhysical medicine and rehabilitation2D Materials and ApplicationsAdvanced Memory and Neural ComputingFerroelectric and Negative Capacitance Devices