Electric field modulated valley- and spin-dependent electron retroreflection and Klein tunneling in a tilted <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:mi>n</mml:mi><mml:mtext>−</mml:mtext><mml:mi>p</mml:mi><mml:mtext>−</mml:mtext><mml:mi>n</mml:mi></mml:math> junction of monolayer <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:mrow><mml:mn>1</mml:mn><mml:msup><mml:mi>T</mml:mi><mml:mo>′</mml:mo></mml:msup></mml:mrow><mml:mtext>−</mml:mtext><mml:msub><mml:mrow><mml:mi>MoS</mml:mi></mml:mrow><mml:mn>2</mml:mn></mml:msub></mml:math>
Dali Wang, Anqi Hu, Jian-Ping Lv, Guojun Jin
Abstract
We study the electronic transport properties in a tilted $n\text{\ensuremath{-}}p\text{\ensuremath{-}}n$ junction of monolayer $1{T}^{\ensuremath{'}}\text{\ensuremath{-}}{\mathrm{MoS}}_{2}$ under a vertical electric field. The analytical derivations and numerical results show that, since the spin degeneracy of the anisotropic bands of monolayer $1{T}^{\ensuremath{'}}\text{\ensuremath{-}}{\mathrm{MoS}}_{2}$ is lifted by the electric field ${E}_{z}$, electrically tunable valley- and spin-dependent electron retroreflection occurs in the tilted $n\text{\ensuremath{-}}p\text{\ensuremath{-}}n$ junction. It is also found that when the electric field ${E}_{z}$ is adjusted to a critical value ${E}_{c}$, valley- and spin-dependent Klein tunneling happens in the $n\text{\ensuremath{-}}p\text{\ensuremath{-}}n$ junction, and the incident angle of Klein tunneling depends on the tilt angle of the junction. Especially, for a certain specific tilt angle, in the case of normal incidence, only a spin-up electron from the $K$ valley can undergo Klein tunneling. Our work offers an efficient mechanism to modulate valley- and spin-dependent electron retroreflection and Klein tunneling in anisotropic tilted Dirac systems.