Advanced Packaging Technology of GaN HEMT Module for High-Power and High-Frequency Applications: A Review
Meiyu Wang, Peng Gao, Fangmin Shi, Weibo Hu, Xudong Wang, Haidong Yan, Yunhui Mei
Abstract
The gallium-nitride (GaN) high-electron-mobility transistors (HEMT) devices have great potential for high-power, high-temperature, and high-frequency applications. However, it is challenging to package GaN HEMT power module with both low parasitic inductance and thermal resistance because the lateral GaN HEMT devices have fast switching speed, high heat flux density, and small die size. This article made a comprehensive review on the state-of-the-art packaging technologies of GaN HEMT power modules based on different substrate integration structures, including printed circuit board (PCB) surface mounting, wire-bonded flip chip, PCB-embedded, ceramic-substrate integrated, insulated metal substrate (IMS) integrated, and hybrid PCB-on-direct bond copper (DBC) packaging. Each technology has a tradeoff among parasitic inductance, thermal performance, and manufacturability. Innovations are still necessary for packaging GaN HEMT modules for their applications in high-frequency and high-power-density converters.