n-Type doping of ε-Ga2O3 epilayers by high-temperature tin diffusion
A. Bosio, A. Parisini, Alessio Lamperti, Carmine Borelli, Laura Fornasini, Matteo Bosi, Ildikó Cora, Zsolt Fogarassy, B. Pécz, Z. Zolnai, Attila Németh, Salvatore Vantaggio, R. Fornari
Topics & Concepts
Materials scienceDopingTinEpitaxyVariable-range hoppingElectrical resistivity and conductivitySapphireChemical vapor depositionThin filmDiffusionAnalytical Chemistry (journal)Atmospheric temperature rangeDeposition (geology)Layer (electronics)Thermal conductionOptoelectronicsNanotechnologyMetallurgyComposite materialOpticsBiologyEngineeringChromatographyElectrical engineeringMeteorologyChemistryPaleontologyThermodynamicsSedimentPhysicsLaserGa2O3 and related materialsZnO doping and propertiesElectronic and Structural Properties of Oxides