High efficiency solar cell based on Cu(In,Ga)S<sub>2</sub> thin film grown by 3-stage process
Nicolas Barreau, Angélica Thomere, D. Cammilleri, Alexandre Crossay, Catherine Guillot‐Deudon, A. Lafond, Nicolas Stéphant, Daniel Lincot, Maria Teresa Caldés, Romain Bodeux, Baptiste Bérenguier
Abstract
We investigate the structural, morphological and optoelectronic properties of Cu(In,Ga)S <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> thin films synthesized following the 3-stage process. The optoelectronic characteristics of the layers are observed drastically improved when the highest processing temperature is increased up to 600°C. Surprisingly, these latter films are not those yielding the highest cells efficiency, probably because of non-optimized buffer/absorber interface. The best performance we have achieved within the frame of this study is 14.2% for a bandgap of 1.65 eV, which is among the best results ever reached with these polycrystalline structures.