Comparative study of gallium nitride and silicon carbide MOSFETs as power switching applications under cryogenic conditions
S.M. Abd El-Azeem, S. M. El‐Ghanam
Topics & Concepts
Materials scienceSilicon carbideGallium nitrideOptoelectronicsMOSFETFigure of meritTransistorAtmospheric temperature rangePower semiconductor deviceNitrideWide-bandgap semiconductorVoltageElectrical engineeringNanotechnologyComposite materialThermodynamicsLayer (electronics)EngineeringPhysicsSilicon Carbide Semiconductor TechnologiesSemiconductor materials and devicesAdvancements in Semiconductor Devices and Circuit Design