Cu–Cu Bonding Using Selective Cobalt Atomic Layer Deposition for 2.5-D/3-D Chip Integration Technologies
Ming-Jui Li, Michael Breeden, Victor Wang, Jonathan Hollin, Nyi Myat Khine Linn, Charles H. Winter, Andrew C. Kummel, Muhannad S. Bakir
Abstract
The feasibility of using selective thermal cobalt metal (Co) atomic layer deposition (ALD) as high density Cu-Cu interconnect bonding is demonstrated at a low temperature (200 °C) and with minimal surface pretreatment. A Cu/Gap/Cu structure, which emulates 3-D ICs stacking is fabricated. Cobalt ALD showing seamless interconnection between copper (Cu) pads with 30-μm pitch is demonstrated with greater than 90% yield through electrical measurements, SEM inspection, EDS, and focused ion beam (FIB) cross section.section.
Topics & Concepts
CobaltAtomic layer depositionInterconnectionMaterials scienceStackingCopperDeposition (geology)Layer (electronics)MetalDirect bondingOptoelectronicsNanotechnologySiliconMetallurgyChemistryComputer sciencePaleontologyBiologyComputer networkOrganic chemistrySediment3D IC and TSV technologiesSemiconductor materials and devicesElectronic Packaging and Soldering Technologies