Interfacial Charge Transfer and Gate-Induced Hysteresis in Monochalcogenide InSe/GaSe Heterostructures
Arvind Shankar Kumar, Mingyuan Wang, Yancheng Li, Ryuji Fujita, Xuan Gao
Abstract
Heterostructures of two-dimensional (2D) van der Waals semiconductor materials offer a diverse playground for exploring fundamental physics and potential device applications. In InSe/GaSe heterostructures formed by sequential mechanical exfoliation and stacking of 2D monochalcogenides InSe and GaSe, we observe charge transfer between InSe and GaSe because of the 2D van der Waals interface formation and a strong hysteresis effect in the electron transport through the InSe layer when a gate voltage is applied through the GaSe layer. A gate voltage-dependent conductance decay rate is also observed. We relate these observations to the gate voltage-dependent dynamical charge transfer between InSe and GaSe layers.