Low-threshold topological nanolasers based on the second-order corner state
Weixuan Zhang, Xin Xie, Huiming Hao, Jianchen Dang, Shan Xiao, Shushu Shi, Haiqiao Ni, Zhichuan Niu, Can Wang, Kuijuan Jin, Xiangdong Zhang, Xiulai Xu
Abstract
Topological lasers are immune to imperfections and disorder. They have been recently demonstrated based on many kinds of robust edge states, which are mostly at the microscale. The realization of 2D on-chip topological nanolasers with a small footprint, a low threshold and high energy efficiency has yet to be explored. Here, we report the first experimental demonstration of a topological nanolaser with high performance in a 2D photonic crystal slab. A topological nanocavity is formed utilizing the Wannier-type 0D corner state. Lasing behaviour with a low threshold of approximately 1 µW and a high spontaneous emission coupling factor of 0.25 is observed with quantum dots as the active material. Such performance is much better than that of topological edge lasers and comparable to that of conventional photonic crystal nanolasers. Our experimental demonstration of a low-threshold topological nanolaser will be of great significance to the development of topological nanophotonic circuitry for the manipulation of photons in classical and quantum regimes.