Polycrystalline diamond growth on β-Ga<sub>2</sub>O<sub>3</sub> for thermal management
Mohamadali Malakoutian, Yiwen Song, Chao Yuan, Chenhao Ren, James Spencer Lundh, Robert M. Lavelle, Joseph E. Brown, David W. Snyder, Samuel Graham, Sukwon Choi, Srabanti Chowdhury
Abstract
Abstract We report polycrystalline diamond epitaxial growth on β -Ga 2 O 3 for device-level thermal management. We focused on establishing diamond growth conditions on β -Ga 2 O 3 accompanying the study of various nucleation strategies. A growth window was identified, yielding uniform-coalesced films while maintaining interface smoothness. In this first demonstration of diamond growth on β -Ga 2 O 3 , a diamond thermal conductivity of 110 ± 33 W m −1 K −1 and a diamond/ β -Ga 2 O 3 thermal boundary resistance of 30.2 ± 1.8 m 2 K G −1 W −1 were measured. The film stress was managed by growth optimization techniques preventing delamination of the diamond film. This work marks the first significant step towards device-level thermal management of β -Ga 2 O 3 electronic devices.