Conduction Mechanism Analysis of Abrupt- and Gradual-Switching InGaZnO Memristors
Woo Sik Choi, Min Song, Hyungjin Kim, Dae Hwan Kim
Abstract
In this work, two types of InGaZnO (IGZO) memristors were fabricated to confirm the conduction mechanism and degradation characteristics of memristors with different electrode materials. The IGZO memristor exhibits abrupt switching characteristics with the Pd electrode owing to the formation and destruction of conductive filaments but shows gradual switching characteristics with the p-type Si electrode according to the amount of generated oxygen vacancy. The electrical characteristics and conduction mechanisms of the device are analyzed using an energy band diagram and experimentally verified with random telegraph noise characteristics confirming the trap effects on the device conduction.
Topics & Concepts
MemristorThermal conductionMaterials scienceElectrodeBand diagramOptoelectronicsElectrical conductorElectrical conductionDegradation (telecommunications)Mechanism (biology)Electronic engineeringComposite materialBand gapChemistryPhysicsEngineeringPhysical chemistryQuantum mechanicsAdvanced Memory and Neural ComputingCCD and CMOS Imaging SensorsNeuroscience and Neural Engineering