On functional boron nitride: Electronic structures and thermal properties
Jing Cao, Tzee Luai Meng, Xikui Zhang, Chee Kiang Ivan Tan, Ady Suwardi, Hongfei Liu
Abstract
The past two decades have witnessed extensive explorations of boron nitride (BN) largely due to its unique optoelectronic properties, mechanical robustness, high thermal conductivity, thermal and chemical stability. Crystal growth and functional engineering of BN thin film structures as well as their integrations with two-dimensional materials for advanced applications have been attracting increasing interest in recent years. Here, we have reviewed the basic structural, electronic, and thermal transport properties of BN, especially hexagonal BN both in bulk and reduced dimensionalities. This is followed by a thorough account of progress in atomic layer deposition (ALD) of BN, which has the advantages of being able to grow on 3D surface and control the film thickness in atomic level. Future perspectives are provided through discussing the potential applications of BN along with the material synthesis.