Effect of dislocation density on optical gain and internal loss of AlGaN-based ultraviolet-B band lasers
Shunya Tanaka, Yuta Kawase, Shohei Teramura, Sho Iwayama, Kosuke Sato, Shinji Yasue, Tomoya Omori, Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama, Isamu Akasaki, Hideto Miyake
Abstract
We investigated the dependence of the lasing threshold power density, optical gain, and internal loss on the dislocation density of an optically pumped AlGaN-based ultraviolet-B band laser. Reducing the dislocation density was found to not only increase the optical gain by reducing the non-radiative recombination centers but also reduce the internal loss. Furthermore, this reduction in internal loss was appropriately explained using an increased scattering model based on an increase in the refractive index fluctuations formed by the dislocations.
Topics & Concepts
Lasing thresholdDislocationMaterials scienceUltravioletLaserOptoelectronicsPower densityRefractive indexRadiative transferOpticsPower (physics)WavelengthPhysicsComposite materialQuantum mechanicsGaN-based semiconductor devices and materialsSemiconductor Quantum Structures and DevicesNanowire Synthesis and Applications