Exploring swift-heavy ion irradiation of InGaN/GaN multiple quantum wells for green-emitters: the use of Raman and photoluminescence to assess the irradiation effects on the optical and structural properties
J. Cardoso, N. Ben Sédrine, Przemysław Jóźwik, Margaret Sequeira, Christian Wetzel, C. Grygiel, K. Lorenz, T. Monteiro, M. R. Correia
Abstract
Xe SHI irradiation of InGaN/GaN MQWs leads to surface damage and intermixing at the interfaces. The introduced defects cause a strong quenching of the luminescence as well as a change in the excitation mechanisms.
Topics & Concepts
Materials sciencePhotoluminescenceIrradiationRaman spectroscopyLuminescenceSwift heavy ionOptoelectronicsQuenching (fluorescence)ExcitationIonOpticsFluorescenceEngineeringFluenceElectrical engineeringQuantum mechanicsNuclear physicsPhysicsGaN-based semiconductor devices and materialsSemiconductor materials and devicesIon-surface interactions and analysis