Epitaxial Growth of Ultraflat Bismuthene with Large Topological Band Inversion Enabled by Substrate-Orbital-Filtering Effect
Shuo Sun, Jing‐Yang You, Sisheng Duan, Jian Gou, Yong Zheng Luo, Weinan Lin, Xu Lian, Tengyu Jin, Jiawei Liu, Yu Huang, Yihe Wang, Andrew T. S. Wee, Yuan Ping Feng, Lei Shen, Jia Lin Zhang, Jingsheng Chen, Wei Chen
Abstract
Quantum spin Hall (QSH) systems hold promises of low-power-consuming spintronic devices, yet their practical applications are extremely impeded by the small energy gaps. Fabricating QSH materials with large gaps, especially under the guidance of design principles, is essential for both scientific research and practical applications. Here, we demonstrate that large on-site atomic spin–orbit coupling can be directly exploited via the intriguing substrate-orbital-filtering effect to generate large-gap QSH systems and experimentally realized on the epitaxially synthesized ultraflat bismuthene on Ag(111). Theoretical calculations reveal that the underlying substrate selectively filters Bi pz orbitals away from the Fermi level, leading pxy orbitals with nonzero magnetic quantum numbers, resulting in large topological gap of ∼1 eV at the K point. The corresponding topological edge states are identified through scanning tunneling spectroscopy combined with density functional theory calculations. Our findings provide general strategies to design large-gap QSH systems and further explore their topology-related physics.