Hole-phonon interactions in quantum dots: Effects of phonon confinement and encapsulation materials on spin-orbit qubits
Jing Li, Benjamin Venitucci, Yann‐Michel Niquet
Abstract
Spin-phonon interactions are one of the mechanisms limiting the lifetime of spin qubits made in semiconductor quantum dots. At variance with other mechanisms such as charge noise, phonons are intrinsic to the device and can hardly be mitigated. They set, therefore, fundamental limits to the relaxation time of the qubits. Here we introduce a general framework for the calculation of the spin (and charge) transition rates induced by bulk (3D) and strongly confined 1D or 2D phonons. We discuss the particular case of hole spin-orbit qubits described by the six bands $\mathbit{k}\ifmmode\cdot\else\textperiodcentered\fi{}\mathbit{p}$ model. We next apply this theory to a hole qubit in a silicon-on-insulator device. We show that spin relaxation in this device is dominated by a band mixing term that couples the holes to transverse acoustic phonons through the valence band deformation potential $d$, and we optimize the bias point and magnetic field orientation to maximize the number of Rabi oscillations $Q$ that can be achieved within relaxation time ${T}_{1}$. Despite the strong spin-orbit coupling in the valence band, the phonon-limited $Q$ can reach a few tens of thousands. We next explore the effects of phonon confinement in 1D and 2D structures and the impact of the encapsulation materials on the relaxation rates. We show that the spin lifetimes can depend on the structure of the device over micrometer-long length scales and that they improve when the materials around the qubit get harder. Phonon engineering in semiconductor qubits may therefore become relevant once the extrinsic sources of relaxation have been reduced.