Inflection Phenomenon in Cryogenic MOSFET Behavior
Arnout Beckers, Farzan Jazaeri, Christian Enz
Abstract
This brief reports the analytical modeling and measurements of the inflection in the MOSFET transfer characteristics at cryogenic temperatures. Inflection is the inward bending of the drain current versus gate voltage, which reduces the current in weak and moderate inversion at a given gate voltage compared to the drift-diffusion current. This phenomenon is explained by introducing a Gaussian distribution of localized states centered around the band edge. The localized states are attributed to disorder and interface traps. The proposed model allows to extract the density of localized states at the interface from the dc current measurements.
Topics & Concepts
MOSFETInflection pointCurrent (fluid)Materials scienceBand bendingCondensed matter physicsVoltageOptoelectronicsPhysicsElectrical engineeringTransistorEngineeringMathematicsGeometryAdvancements in Semiconductor Devices and Circuit DesignSemiconductor materials and devicesSilicon Carbide Semiconductor Technologies