Frequency Scaling, Elastic Transition, and Broad-Range Frequency Tuning in WSe<sub>2</sub>Nanomechanical Resonators
Jiankai Zhu, Bo Xu, Fei Xiao, Yachun Liang, Chenyin Jiao, Jing Li, Qingyang Deng, Song Wu, Ting Wen, Shenghai Pei, Juan Xia, Zenghui Wang
Abstract
Nanomechanical resonators based on atomic layers of tungsten diselenide (WSe2) offer intriguing prospects for enabling novel sensing and signal processing functions. The frequency scaling law of such resonant devices is critical for designing and realizing these high-frequency circuit components. Here, we elucidate the frequency scaling law for WSe2 nanomechanical resonators by studying devices of one-, two-, three-, to more than 100-layer thicknesses and different diameters. We observe resonant responses in both mechanical limits and clear elastic transition in between, revealing intrinsic material properties and devices parameters such as Young’s modulus and pretension. We further demonstrate a broad frequency tuning range (up to 230%) with a high tuning efficiency (up to 23% V–1). Such tuning efficiency is among the highest in resonators based on two-dimensional (2D) layered materials. Our findings can offer important guidelines for designing high-frequency WSe2 resonant devices.