Valley-Spin Logic Gates

Abstract

In the emerging field of $v\phantom{\rule{0}{0ex}}a\phantom{\rule{0}{0ex}}l\phantom{\rule{0}{0ex}}l\phantom{\rule{0}{0ex}}e\phantom{\rule{0}{0ex}}y\phantom{\rule{0}{0ex}}t\phantom{\rule{0}{0ex}}r\phantom{\rule{0}{0ex}}o\phantom{\rule{0}{0ex}}n\phantom{\rule{0}{0ex}}i\phantom{\rule{0}{0ex}}c\phantom{\rule{0}{0ex}}s$, logic gates are typically based on the valley-pseudospin degree of freedom in materials with particular electronic structures. For certain two-dimensional (2D) materials, the valley-dependent spin polarization is 100% and can be switched by an electric field. The authors design valley-spin logic gates based on certain 2D materials, and demonstrate seven complete logic gates: NOT, XNOR, XOR, AND, NAND, OR, and NOR. Importantly, the proposed valley-spin gates satisfy the concatenation requirement, which is key for practical use: The output of one can be used as the input for the next, and all inputs and outputs are plain voltages.

Topics & Concepts